Aluminum induced in situ crystallization of amorphous SiC

Crystallization Kinetics Study in Al87Ni10La3 Amorphous Alloy

In this study, the crystallization behavior of melt-spun Al87Ni10La3 amorphous phase was investigated by using X-ray diffraction and non-isothermal differential thermal analysis techniques. The results demonstrated that the amorphous phase exhibited two-stage crystallization on heating, i.e., at first step the amorphous phase transforms into α-Al phase and at second step Al11La3 and Al3Ni inter...

Experimental study of aluminum-induced crystallization of amorphous silicon thin films

This work was an experimental study of the aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) for the fabrication of polycrystalline silicon film. The a-Si film was deposited on silicon wafer by low pressure chemical vapor deposition (LPCVD) technique. Aluminum was sputtered on to the a-Si film at different thicknesses. The samples were annealed for 3 h at different temperatures...

Shear-induced crystallization of an amorphous system.

The influence of a stationary shear flow on the crystallization in a glassy system is studied by means of molecular dynamics simulations and subsequent cluster analysis. The results reveal two opposite effects of the shear flow on the processes of topological ordering in the system. Shear promotes the formation of separated crystallites and suppresses the appearance of the large clusters. The s...

Aluminum-induced Crystallization of Semiconductor Thin Films

Thin film materials of the semiconductors, such as silicon (Si), germanium (Ge) or their alloys, are turning into the most promising functional materials in the energy technology. However, the morphologies of these semiconductor thin films must be varied to be suitable for the different applications, e.g. a large-grained layer as the seed layer of thin film solar cells, a porous structure for a...

Aluminum-implantation-induced deep levels in n-type 6H–SiC